Simulation Study of Ge p-type Nanowire Schottky Barrier MOSFETs

摘要

Ambipolar currents in Germanium p-type nanowire Schottky barrier MOSFETs werecalculated fully quantum-mechanically by using the multi-band k.p method andthe non-equilibrium Green's function approach. We investigated the performanceof devices with 100, 110, and 111 channel orientations, respectively, byvarying the nanowire width, Schottky barrier height, and EOT. The 111 orienteddevices showed the best performance. In comparison to Si as a channel material,Ge is more desirable because more current can be injected into the channel,resulting in steeper subthreshold slope and higher on-state current. Ourcalculations predict that the Ge channel devices should have an EOT gain of0.2-0.5 nm over Si channel devices.